Semiconductor package thermal spreader having integrated RF/EMI shielding and antenna elements

ABSTRACT

A cost-effective process and structure is provided for a thermal dissipation element for semiconductor device packages incorporating antennas that can incorporate RF/EMI shielding from the antenna elements. Certain embodiments provide incorporated antenna element structures as part of the same process. These features are provided using a selectively-plated thermal dissipation structure that is formed to provide shielding around semiconductor device dies that are part of the package. In some embodiments, the thermal dissipation structure is molded to the semiconductor device, thereby permitting a thermally efficient close coupling between a device die requiring thermal dissipation and the dissipation structure itself.

BACKGROUND Field

This disclosure relates generally to semiconductor device packaging, andmore specifically, to providing a heat sink or heat spreaderincorporating radio frequency/electromagnetic interference shielding andantenna elements for a semiconductor device having one or moreintegrated antenna elements.

Related Art

Antenna technology and placement is one of the critical issues for 5Gsemiconductor systems. At millimeter wave (mmWave) frequencies, longpaths from semiconductor packages to associated antennas would generatehigh signal losses, thereby making it desirable to integrate antennainto a semiconductor device package. So-called antenna-in-package (AiP)devices present unique challenges for semiconductor packagingtechnologies including, for example, miniaturization, thermalmanagement, shielding, and antenna compatibility.

With an antenna integrated to a semiconductor device package, it isdifficult to place a thermal dissipation structure without impactingantenna operations. In some devices, the antenna signal path is blockedby a standard heat sink. In other devices, a customized structure isprovided that opens a window in the heat sink above the antenna region,but this leads to complex device assembly and can reduce theeffectiveness of the heat sink.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments of the present invention may be better understood byreferencing the accompanying drawings.

FIG. 1 is a simplified block diagram illustrating an example of astandard heat spreader attached to a flip chip (FC) package-basedantenna-in-package (AiP).

FIGS. 2A and 2B are simplified block diagrams illustrating asemiconductor device package 200 incorporating an example embodiment ofthe present invention.

FIGS. 3A-3D are simplified block diagrams illustrating an example heatspreader element both before and after an etching process.

FIGS. 4A through 8B illustrate an example process flow used formanufacturing embodiments of the present invention.

FIGS. 9A-9D illustrate an alternate embodiment of a heat spreaderelement with integrated antenna element structures, in accord withembodiments of the present invention.

The use of the same reference symbols in different drawings indicatesidentical items unless otherwise noted. The figures are not necessarilydrawn to scale.

DETAILED DESCRIPTION

Embodiments of the present invention provide a cost-effective processand structure for a thermal dissipation element for semiconductor devicepackages incorporating antennas that can incorporate RF/EMI shieldingfrom the antenna elements. Further embodiments can provide incorporatedantenna element structures as part of the same process. These featuresare provided using a selectively-plated thermal dissipation structurethat is formed to provide shielding around semiconductor device diesthat are part of the package. In some embodiments, the thermaldissipation structure is molded to the semiconductor device, therebypermitting a thermally efficient close coupling between a device dierequiring thermal dissipation and the dissipation structure itself.

FIG. 1 is a simplified block diagram illustrating an example of astandard heat spreader attached to a flip chip (FC) package-basedantenna-in-package (AiP). FC is one of the packaging technologies thatis well adapted to integrating antenna elements to a semiconductordevice package. With antenna elements integrated to a semiconductordevice package, there are difficulties in placing a thermal dissipationstructure without impacting antenna operations.

Semiconductor device package 100 provides a semiconductor device die 110mounted on a device substrate 115. As illustrated, the device substrateprovides signal routing between semiconductor device die 110 andantennas 120 that are placed side-by-side with the semiconductor devicedie to allow wireless or RF signals to be transmitted through a top sideof the package. In order to provide heat dissipation for semiconductordevice die 110, a standard heat spreader 130 is illustrated as attachedto the semiconductor device package molding material 140. Heat spreader130 can be attached to the molding material using a thermally conductivematerial or a bonding material.

The semiconductor device package illustrated in FIG. 1 illustrates a fewissues with such a structure. As an initial matter, the antenna signalpath from antennas 120 is blocked by heat spreader 130. To provide aclear signal path, a window can be opened above the antenna structuresin heat spreader 130, but this would lead to a customized heat spreaderstructure. Further, the thermal capacity of the heat structure would becompromised through the creation of such windows.

Another issue with the structure in FIG. 1 is associated with antennathickness “a” above the surface of substrate 115, which is dictated byRF performance requirements. Thickness “a” can be on the order ofhundreds of microns (e.g., 450 μm). This thickness, in turn, determinesa thickness of mold compound 140 that equals a thickness “d” ofsemiconductor device die 110 (e.g., 400 μm) plus a top gap “g” (e.g.,˜50 μm). But if a total thickness of “d” plus “g” is too large,effective heat dissipation from the active side of semiconductor devicedie 110 through heat spreader 130 will be negatively affected becausethermal conductivity of both semiconductor device die 110 and moldmaterial 140 is not as good as that of heat spreader 130. For effectiveheat dissipation, both the thickness “d” and top gap “d” should beminimized, but these are in turn constrained by antenna thickness “a”. Afurther thickness related issue can relate to the total thickness “H” ofthe entire AiP structure being too large for some applications (e.g.,fitting into a mobile device). As will be further discussed below,embodiments of the present invention overcome these issues.

FIGS. 2A-2B are simplified block diagrams illustrating a semiconductordevice package 200 incorporating an example embodiment of the presentinvention. Semiconductor device package 200 provides a semiconductordevice die 210 mounted on a package substrate 215. As with the deviceillustrated in FIG. 1 , the device substrate provides signal routingbetween semiconductor device die 210 and antenna structures 220 that areplaced near the semiconductor device die for transmitting wireless or RFsignals through a top side of the package.

In order to provide heat dissipation for semiconductor device die 210, aheat spreader element 230, configured in accord with embodiments of thepresent invention, is in thermal contact with semiconductor device die210 through a thermal interface material (TIM) 240. Heat spreaderelement 230 is a thermally-conductive structure that includes structures235 (e.g., fins or pins) that increase surface area on the portion ofheat spreader element 230 to enhance heat dissipation. To allow wirelessor RF signal transmission through the package from antenna structures220, heat spreader element 230 also provides openings 250 in a regionabove the antennas. As will be discussed in greater detail below,openings 250 and structures 235 are formed using an etching processsubsequent to attachment of heat spreader element 230 to thesemiconductor device die 210 and the substrate.

As illustrated, heat spreader element 230 further includes shieldingstructures 237 and sidewall structures 238 that provide RF/EMI shieldingbetween semiconductor device die 210 and antennas 220 and the outsideenvironment. A mold compound 240 attaches heat spreader element 230 tothe semiconductor device formed on substrate 215. A portion of the moldcompound over antennas 220 is exposed by openings 250.

FIG. 2B illustrates some of the dimensional advantages of embodiments ofthe present invention. Semiconductor device die 210 and heat spreaderelement 230 can have significantly closer contact than in thesemiconductor device package illustrated in FIG. 1 . A surface of heatspreader element 230 is separated from the top surface of semiconductordevice die 210 by only a thin layer of TIM 240, with no mold compound inthat region. This close contact can be achieved regardless of thethickness of semiconductor device die 210, thereby allowing the die tobe very thin and close contact to heat spreader element 230 through TIM240 for efficient heat dissipation. This is not possible with the priorart structures of FIG. 1 . In addition, overall package profilethickness “H” (from FIG. 1 ) can be significantly lowered with the heatspreader element provided by embodiments of the present invention.

FIGS. 3A-3D are simplified block diagrams illustrating an example heatspreader element both before and after an etching process that resultsin both structures 235 and openings 250 discussed above with regard toFIGS. 2A and 2B. FIGS. 3A and 3B provide an example top and bottom view,respectively, of the example heat spreader element prior to etching.While heat spreader element 230 can be prepared from a range of metalsor metal alloys (e.g., aluminum or stainless steel) compatible withsemiconductor packaging, copper satisfies thermal capacity and ease ofetching criteria for many applications. The heat spreader element can beformed using lead frame or heat sink manufacturing techniques known inthe art. Specifically, stamping or etching can be used to create desiredstructures for shielding, such as a shield structures 323 and 325 aroundregion 324 where one or more semiconductor device die will be locatedwhen the heat spreader element is assembled with a semiconductor device.Additional structures formed on the bottom-side surface can includeopenings 329 for mold compound (e.g., mold compound 240) to be appliedbetween a semiconductor device and the heat spreader element.

Selective plating (e.g. 315) on the topside of the heat spreader elementcan be applied with standard lead frame plating processes. Thisselective plating can be applied using a standard pre-plated finish(PPF) technique (e.g., NiPd or other type inert-to-metal etchants) thatis applied to the areas of the heat spreader element to be kept duringsubsequent etching, as will be discussed more fully below. A typical,low-cost lead frame etching process is applicable for metal etching ofembodiments of the present invention. If copper is used for the heatspreader element, chemicals such as persulfate salt (e.g., ammoniumpersulfate), ferric chloride, hydrochloric acid, or hydrogen peroxidecan be used for the etching process.

FIGS. 3C and 3D provide an example top and bottom view, respectively, ofthe heat spreader element subsequent to etching. Metal is removed fromthe heat spreader element creating topside structures 335 in the regionswhere selective plating 315 was applied. These structures provideadditional surface area on the portion of the heat spreader elementrelied upon to dissipate heat from a semiconductor device die in contactwith the bottom surface of the heat spreader element. In addition,openings 350 are created during etching of thinner metal regions 327formed during the initial formation of the heat spreader element.Openings 350 in the heat spreader element are created to permittransmission of RF signals from antenna structures associated with asemiconductor device attached to the heat spreader element.

FIGS. 4A through 8B illustrate an example process flow used formanufacturing embodiments of the present invention. As illustrated, thetop image of each figure is a perspective plan view of each stage inprocessing, while the bottom image of each figure is a cross sectionview of that same stage of processing. FIGS. 4A and 4B illustrate asemiconductor device 400 having a semiconductor device die 420 and twoantenna structures 430 attached to a package substrate 410. Inoperation, such a semiconductor device would have signals generated bysemiconductor device die 420 provided to antenna structures 430 for RFtransmission in a direction extending vertically away from the topsurface of the antenna structures.

In the embodiments shown in FIGS. 4A through 8B, semiconductor devicedie 420 is a flip chip die, having active side in a face-downorientation toward the top surface of package substrate 410. Thesemiconductor die active side can include active circuitry and aplurality of die pads connected to the active circuitry, where the diepads of semiconductor device die 420 are attached (e.g., mechanicallyattached and electrically connected) through solder bumps to landingpads on the package substrate. Some (up to and including all) of theplurality of die pads are connected to a signal line of active circuitrythat may carry either a radio frequency (RF) signal or may carry anon-RF signal (e.g., a power supply signal like Vss or Vdd). The RFsignal may be carried by a conductive path coupled between a respectivedie pad and antenna 430 through package substrate 410, where the RFsignal may be transmitted from or received on antenna 430. It should benoted that embodiments are not limited to flip chip die configurations,as discussed herein.

Semiconductor device die 420 may be singulated from a semiconductorwafer, which can be any semiconductor material or combinations ofmaterials, such as gallium arsenide, silicon germanium,silicon-on-insulator (SOI), silicon, monocrystalline silicon, the like,and combinations of the above. Such a semiconductor die includes activecircuitry, which may include integrated circuit components that areactive when the die is powered. The active circuitry is formed on thesemiconductor wafer using a sequence of numerous process steps appliedto semiconductor wafer, including but not limited to depositingsemiconductor materials including dielectric materials and metals, suchas growing, oxidizing, sputtering, and conformal depositing, etchingsemiconductor materials, such as using a wet etchant or a dry etchant,planarizing semiconductor materials, such as performing chemicalmechanical polishing or planarization, performing photolithography forpatterning, including depositing and removing photolithography masks orother photoresist materials, ion implantation, annealing, and the like.In some embodiments, the active circuitry may be a combination ofintegrated circuit components or may be another type of microelectronicdevice. Examples of integrated circuit components include but are notlimited to a processor, memory, logic, oscillator, analog circuitry,sensor, MEMS (microelectromechanical systems) device, a standalonediscrete device such as a resistor, inductor, capacitor, diode, powertransistor, and the like. When semiconductor device die 420 operates,heat is generated at the active side of the die. It is thereforedesirable to make the die thin so that excess heat can conduct to TIM240, for example, and then to heat spreader 235 effectively.

It is noted that in embodiments of the present invention, the activecircuitry of semiconductor device die 420 includes a radio frequency(RF) block that implements an RF transmitter, an RF receiver, or both.In some embodiments, RF signals are transmitted, received, or both, viaan antenna on the resulting device (e.g., on package substrate 410) thatis communicatively coupled to the active circuitry of semiconductordevice die 420 (e.g., through one or more external electricalconnections between the die and the package substrate). The RF block mayimplement front-end components of the RF transmitter, RF receiver, orboth, where the front-end components may include but are not limited toa transmitter power amplifier, a receiver low noise amplifier, one ormore baluns, one or more filters, a circulator or other coupling deviceto the antenna, impedance matching elements, an oscillator, a phaselocked loop, and other appropriate front-end elements. The front-endcomponents of the RF block may have configurable settings to adjust thetransmit signal or receive signal. In some embodiments, the RF block mayhave an operating frequency that falls within a frequency band range offrom a few hundred megahertz to tens of gigahertz, although otheroperating frequencies that fall within other radio frequencies may beimplemented in other embodiments.

FIGS. 5A and 5B illustrate a next stage in the example process flowsubsequent to that illustrated in FIGS. 4A and 4B. A heat spreaderelement 510 is thermally coupled to semiconductor device die 420 using athin layer of thermal interface material 520. Such a thermal interfacematerial can include, for example, a thermal paste that includesaluminum oxide, boron nitride, zinc oxide, or aluminum nitride, or athermal adhesive. The attachment process can be a surface mount or epoxyattach, for example. In some embodiments, a strip of heat spreaderelements 510 can be applied to a corresponding set of semiconductordevices. As discussed above with regard to FIG. 3 , structures formed onthe semiconductor device side facing surface of heat spreader element510 can form, for example, RF/EMI shield regions 530 and openings 540for mold compound to be applied between the spreader element and thesemiconductor device. In some embodiments, heat spreader element 510 isdesired to connect to a ground of package substrate 410 for RF/EMIshielding. This connection can be provided using, for example,conductive paste material or other conductive bonding materials appliedat substrate contact points 560. Heat spreader element 510 furtherincludes selectively plated regions (e.g., plated regions 550) that willdefine areas that will not be etched during a subsequent etchingprocess, to be described below.

FIGS. 6A and 6B illustrate a next stage in the example process flowsubsequent to that illustrated in FIGS. 5A and 5B. A mold compound 610is applied to the region between heat spreader element 510 and thesemiconductor device formed on substrate 410 that includes openings 540.The mold compound also is formed in a perimeter region 620 around heatspreader element 510, which can be exposed during separation ofneighboring packages on a strip. In one embodiment, film-assistedmolding can be used to provide a resin-bleed free molding process. Itshould be noted that the thickness of the mold over the antenna elements(for example, in region 630) can be adjusted through the design of heatspreader element 510. The thickness of the mold over the antennaelements can have an effect on the RF performance of the antennaelements, and therefore is selectable for a particular application. Thethickness of the mold compound over the antenna elements cannot beindependently modified in prior art devices, and can affect the heatremediation characteristics of the heat spreader in such devices byincreasing gap “g.”

FIGS. 7A and 7B illustrate a next stage in the example process flowsubsequent to that illustrated in FIGS. 6A and 6B. An entire strip ofmultiple packages can be subjected to a metal etching process. Sinceheat spreader element 510 is prepared with selective plating 550 on theexposed topside of the heat spreader element, only exposed space metalwill be etched off during the etching process, while the plating finishis inert to etchant and acts as an etching mask. Metal in regions aboveantenna elements 430 is totally removed during etching, creating antennaopenings 710 that will expose molding above antenna elements 715 andallow an RF signal from the antenna elements to be transmitted duringoperation of the semiconductor device. The etching process also createsstructures (e.g., 730) that increase surface area of heat spreader 720for more efficient heat dissipation from semiconductor device die 420.The etching process can be performed in a batch process in strip formusing established semiconductor or lead frame processes in a highefficiency and low-cost manner.

FIGS. 8A and 8B illustrate a next stage in the example process flowsubsequent to that illustrated in FIGS. 7A and 7B. As illustrated,solder balls or other contacts 810 are added to semiconductor devicepackage 800. At this stage, other processes such as marking andsingulation can be performed to complete the semiconductor devicepackage. Other processes, such as metal finish or a coating layer can beapplied before singulation, if necessary, to protect the base metalsfrom environmental effects.

The process discussed above with regard to FIGS. 4A-8B is illustratedusing Flip Chip-Chip Scale Packaging (FC-CSP) packaging with an addedetching process. It should be noted that the semiconductor devicestructure is not limited to FC-CSP, but can be used with multiple leadframe, substrate-based packages (e.g., WB-CSP, FC-Q FN, and the like),and fan-out wafer level or panel-level packages. In addition, while theillustrations show square patterns used for plating finish 550, othershapes and different sizes can easily be defined through the selectiveplating process. Thus, the number, shape, size, and placement of platedregions can be selected in light of the application, and regions desiredfor enhanced thermal dissipation.

FIGS. 9A-9D illustrate an alternate embodiment of a heat spreaderelement, in accord with embodiments of the present invention. Anadvantage of using etching to provide structures on the heat spreaderelement and openings is that other structures can be formed byselectively plating. For example, antennas can be formed from the metalof the heat spreader element and connecting structures for thoseantennas can be formed during either etching or initial formation of theheat spreader element (e.g., stamping). In so doing, antenna elements430, for example, can be eliminated from the semiconductor devicepackage.

Illustration 910 (FIG. 9A) shows a top surface of a heat spreaderelement prior to etching. Selective plating 912 on the top surface isused to form heat spreader structures, as illustrated above. Inaddition, selective plating is provided to form specialized antennastructures. For example, selective plating 914 is in a shape and regionto provide a patch antenna structure. As another example, selectiveplating 916 is in a shape and region to provide a dipole antennastructure.

Illustration 920 (FIG. 9B) shows a bottom view of the heat spreaderelement of illustration 910, again prior to etching. In addition toshielding structures 922, there are also formed dipole feeds 924, in aregion beneath selective plating 916. The dipole feeds are a mechanismfor a semiconductor device associated with the heat spreader element toprovide signals to the dipole antenna formed during etching.

Illustration 930 (FIG. 9C) shows a top surface view of the heat spreadersubsequent to etching, in which structures 932 are formed, as discussedabove. In addition, in one antenna region, patch antennas 934 are formedwhere selective plating 914 was applied. In another antenna region,dipole antenna 936 is formed where selective plating 916 was applied.

Illustration 940 (FIG. 9D) shows a bottom surface view of the etchedheat spreader of illustration 930. Dipole feeds 944 are shown attachedto formed dipole antenna 936. In addition, the bottom surface of patchantennas 934 is shown, along with shielding structures 922. Formation ofa semiconductor device package incorporating the heat spreader elementof FIG. 9 can follow a similar process flow to that discussed above withregard to FIGS. 4-8 . An additional step that may be used with the heatspreader element of FIG. 9 is inclusion of alignment features (e.g.,fiducials) to ensure that the dipole antenna feeds and patch antennasare properly located to contacts on the associated semiconductor devicewhen the heat spreader element is attached to the semiconductorpackaging substrate. It should be realized that antenna structuresformed using the metal of the heat spreader element are not limited tothe patch antenna and dipole antenna illustrated and can take anyappropriate shape and structure as suggested by the application.

Embodiments of the present invention provide a mechanism by which a heatspreader element can be added to a semiconductor device package with lowcost and few process modifications. Heat spreading structures on thedevice-facing side of the heat spreader are formed prior to inclusion ofthe heat spreader on the semiconductor device. So too is selectiveplating provided prior to assembly. Once added to the semiconductordevice die, only an additional etching step is needed as compared withstandard semiconductor packaging technologies.

In addition, embodiments provide dimensional advantages over prior artheat spreading structures. Embodiments can provide a significantly lowerpackage profile (“H” from FIG. 1 ) than prior art devices due toembedding the heat spreader itself into the package. Embodiments alsoprovide a close contact between a thin semiconductor device die (e.g.,semiconductor device die 210) and the heat spreader element, and allowfor the die thickness to be thin, which allows for improved heatdissipation from the device die. This improved heat dissipation isprovided in spite of the introduction of openings over the antennastructures. Further, the thickness of the mold over the antennastructures can be tuned by modifying the heat spreader element design(e.g., modifying the width of the gaps in region 540 without concern foraffecting thermal dissipation from the semiconductor device die. Thiscan have a significant effect on RF performance of the antennastructures.

Embodiments also provide flexibility in whether to include antennaelements as part of the heat spreader element, as shown in FIGS. 9A-9D,and also in the shape, number, and depth of the structures on thenon-die facing portion of the heat spreader element. As another example,a metal separation can be kept in the antenna window region to providemulti-channel antenna isolation. The shielding structures can also beincluded to have RF/EMI shielding to the die and antennas.

By now it should be appreciated that there has been provided a methodfor forming a semiconductor device package. The method includesthermally coupling a portion of a first major surface of a heat spreaderelement to an exposed surface of a semiconductor device die of asemiconductor device, applying a mold compound to a gap region betweenthe first major surface of the heat spreader element and an exposedsurface of the semiconductor device, and etching a second major surfaceof the heat spreader element subsequent to applying the mold compound.The second major surface of the heat spreader element includes selectiveplating in a region opposite the portion of the heat spreader element inthermal contact with the semiconductor device die. The etching forms oneor more structures in the selectively plated portion of the second majorsurface. The etching forms a heat spreader in contact with thesemiconductor device die.

In one aspect of the above embodiment, thermally coupling includes usinga thermally conductive material between the exposed surface of thesemiconductor device die and the portion of the first major surface ofthe heat spreader element. In another aspect, the semiconductor deviceincludes one or more antenna contacts, the second major surface of theheat spreader element includes antenna selective plating in regionscorresponding to the one or more antenna contacts, and the etching formsan antenna structure in the regions under the antenna selective plating.

In yet another aspect of the above embodiment, the method furtherincludes forming the heat spreader element from a thermally-conductivemetal where the forming includes one of stamping or etching. In afurther aspect, forming the heat spreader element further includesforming one or more shielding structures on the first major surface ofthe heat spreader element. In a still further aspect, the one or moreshielding structures are configured to provide electromagnetic shieldingbetween devices include on a substrate of the semiconductor devicepackage.

In another aspect of the above embodiment, the structures are configuredto enhance thermal dissipation characteristics of the heat spreader. Inyet another aspect, the method further includes attaching contacts to abottom-side major surface of the semiconductor device package after theetching. In another aspect, the heat spreader element is one of a stripof heat spreader elements applied to a corresponding set ofnon-singulated semiconductor devices. In a further aspect, the methodfurther includes singulating the semiconductor device package after theetching.

Another embodiment provides a semiconductor device package that includesa package substrate, a semiconductor device die having first and secondopposing major surfaces where the first major surface is mounted to thepackage substrate, and a heat spreader element that has first and secondmajor surfaces. The heat spreader element is made of a thermally andelectrically conductive material. A first portion of the first majorsurface of the heat spreader element is thermally coupled to the secondmajor surface of the semiconductor device die. The heat spreader elementincludes a plurality of structures formed on the second opposing majorsurface of the heat spreader element in a region opposing the portion ofthe first major surface coupled to the semiconductor device die. Theheat spreader element further includes one or more openings formedthrough the heat spreader element in a portion of the semiconductordevice package having an antenna structure.

In one aspect of the above embodiment, the semiconductor device packagefurther includes a mold compound formed in a region between the firstmajor surface of the heat spreader element and elements of thesemiconductor device package mounted on the package substrate. In afurther aspect, the one or more openings in the heat spreader elementexpose a surface of the mold compound.

In another aspect of the above embodiment, the semiconductor devicepackage further includes one or more antenna elements mounted on thepackage substrate. Each antenna element is located in a region under acorresponding opening in the heat spreader element where each antennaelement is configured to transmit an RF or wireless signal through thecorresponding opening. In still another aspect, the semiconductor devicepackage further includes one or more antenna elements formed from thethermally and electrically conductive material. Each antenna element islocated in a region of a corresponding opening in the heat spreaderelement where each antenna element is configured to transmit an RF orwireless signal. In a further aspect, the one or more antenna elementsare formed during and etching process of the heat spreader element andthe plurality of structures are formed during the etching process of theheat spreader element.

In still another aspect of the above embodiment, the heat spreaderelement further includes one or more shield structures formed on asecond portion of the first major surface of the heat spreader elementwhere the shield structures are configured to electromagnetically shieldthe semiconductor device die and the shield structures are formed fromthe heat spreader material. In yet another aspect, the semiconductordevice package further includes a thermally-conductive material betweenthe semiconductor device die and the first portion of the first majorsurface of the heat spreader element.

Because the apparatus implementing the present invention is, for themost part, composed of electronic components and circuits known to thoseskilled in the art, circuit details will not be explained in any greaterextent than that considered necessary as illustrated above, for theunderstanding and appreciation of the underlying concepts of the presentinvention and in order not to obfuscate or distract from the teachingsof the present invention.

Moreover, the terms “front,” “back,” “top,” “bottom,” “over,” “under”and the like in the description and in the claims, if any, are used fordescriptive purposes and not necessarily for describing permanentrelative positions. It is understood that the terms so used areinterchangeable under appropriate circumstances such that theembodiments of the invention described herein are, for example, capableof operation in other orientations than those illustrated or otherwisedescribed herein.

It is to be understood that the architectures depicted herein are merelyexemplary, and that in fact many other architectures can be implementedwhich achieve the same functionality. In an abstract, but still definitesense, any arrangement of components to achieve the same functionalityis effectively “associated” such that the desired functionality isachieved. Hence, any two components herein combined to achieve aparticular functionality can be seen as “associated with” each othersuch that the desired functionality is achieved, irrespective ofarchitectures or intermedial components. Likewise, any two components soassociated can also be viewed as being “operably connected,” or“operably coupled,” to each other to achieve the desired functionality.

Although the invention is described herein with reference to specificembodiments, various modifications and changes can be made withoutdeparting from the scope of the present invention as set forth in theclaims below. For example, the shape and relative depth of structures730 can be altered in accord with the needs of a specific application.Accordingly, the specification and figures are to be regarded in anillustrative rather than a restrictive sense, and all such modificationsare intended to be included within the scope of the present invention.Any benefits, advantages, or solutions to problems that are describedherein with regard to specific embodiments are not intended to beconstrued as a critical, required, or essential feature or element ofany or all the claims.

The term “coupled,” as used herein, is not intended to be limited to adirect coupling or a mechanical coupling.

Furthermore, the terms “a” or “an,” as used herein, are defined as oneor more than one. Also, the use of introductory phrases such as “atleast one” and “one or more” in the claims should not be construed toimply that the introduction of another claim element by the indefinitearticles “a” or “an” limits any particular claim containing suchintroduced claim element to inventions containing only one such element,even when the same claim includes the introductory phrases “one or more”or “at least one” and indefinite articles such as “a” or “an.” The sameholds true for the use of definite articles.

Unless stated otherwise, terms such as “first” and “second” are used toarbitrarily distinguish between the elements such terms describe. Thus,these terms are not necessarily intended to indicate temporal or otherprioritization of such elements.

What is claimed is:
 1. A method for forming a semiconductor devicepackage, the method comprising: thermally coupling a portion of a firstmajor surface of a heat spreader element to an exposed surface of asemiconductor device die of a semiconductor device; applying a moldcompound to a gap region between the first major surface of the heatspreader element and an exposed surface of the semiconductor device; andetching a second major surface of the heat spreader element subsequentto said applying the mold compound, wherein the second major surfacecomprises selective plating in a region opposite the portion of the heatspreader element in thermal contact with the semiconductor device die,said etching forms one or more structures in the selectively platedportion of the second major surface, and said etching forms a heatspreader in contact with the semiconductor device die.
 2. The method ofclaim 1 wherein said thermally coupling comprises using a thermallyconductive material between the exposed surface of the semiconductordevice die and the portion of the first major surface of the heatspreader element.
 3. The method of claim 1, wherein the semiconductordevice comprises one or more antenna structures, and said etching formsone or more openings in the heat spreader element in a region above eachof the one or more antenna structures.
 4. The method of claim 1, whereinthe semiconductor device comprises one or more antenna contacts, thesecond major surface of the heat spreader element comprises antennaselective plating in regions corresponding to the one or more antennacontacts, and said etching forms an antenna structure in the regionsunder the antenna selective plating.
 5. The method of claim 1 furthercomprising: forming the heat spreader element from athermally-conductive metal, wherein said forming comprises one ofstamping or etching.
 6. The method of claim 5 wherein said forming theheat spreader element further comprises forming one or more shieldingstructures on the first major surface of the heat spreader element. 7.The method of claim 6 wherein the one or more shielding structures areconfigured to provide electromagnetic shielding between devicescomprised on a substrate of the semiconductor device package.
 8. Themethod of claim 1, wherein the structures are configured to enhancethermal dissipation characteristics of the heat spreader.
 9. The methodof claim 1 further comprising attaching contacts to a bottom-side majorsurface of the semiconductor device package subsequent to said etching.10. The method of claim 1, wherein the heat spreader element is one of astrip of heat spreader elements applied to a corresponding set ofnon-singulated semiconductor device packages.
 11. The method of claim 10further comprising singulating the semiconductor device packagesubsequent to said etching.